ScholarWorks@Korea University: LEE, Hae Seok

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LEE, Hae Seok (이해석)

Department of Energy and Environment

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Tel 02-3290-3713
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Passivation:4||solar cell:4||silicon solar cells:4||Passivated contact:3||silicon solar cell:3||perovskite solar cells:3||copper:3||Solar cell:3||Solar cells:3||Metallization:3||Blistering:2||photovoltaics:2||carbon nanotubes:2||transparent perovskite solar cells:2||solar cell texturing:2||organic solar cell:2||surface texture:2||aluminum oxide:2||CIGS solar module:2||shunt defect:2||additivefree texturing:2||multicrystalline texturing:2||Ion Implantation:2||Potential induced degradation:2||Perovskite:2||Silicon solar cells:2||Electrospinning:2||tandem solar cells:2||lockin thermography:2||surface treatment:2||surface passivation:2||Phosphorus Emitter:2||passivated contact:2||thinfilm photovoltaics:2||tunnel oxide passivated contact:2||CIGS solar cells:2||Borondoped emitter:2||recovery:2||Si solar cell:2||Crystallization:2||Silicon Solar Cell:2||PV modules:2||Tunnel oxide:2||Supercapacitor:2||Carbon nanofiber:2||silicon texturing:2||Perovskite solar cells:2||multicrystalline silicon:1||Front grid optimization:1||Finger width:1||plasmaassisted atomic layer deposition:1||layerbylayer:1||selfassembly energy downshift:1||photoluminescence:1||Korea solar policy:1||Chemical vapor deposition:1||hybrid:1||perovskite/silicon 4terminal tandem:1||current injection:1||Silicon nitride:1||Perovskite solar cell:1||UV stability:1||Back Surface Recombination Velocity:1||Solarweighted reflectance:1||Firing Stability:1||Supersonic cold spraying:1||Silicon wafer:1||quantum efficiency:1||Acceleration Voltage:1||Dopant Activation:1||Solar Cells:1||Screen printing:1||Wafer resistivity:1||Cu(In:1||hotspot:1||contact resistance:1||Ultrafine nanostructures:1||Electrochemical CO2 reduction reaction (CO2RR):1||Carbon monoxide:1||EBIC:1||FeEDTA:1||voids:1||Wearable supercapacitor:1||Electroplating:1||Selfassembling coordination chemistry:1||Surface passivation:1||Tandem:1||hydrogen evolution reaction:1||water electrolysis:1||PVDF:1||PID:1||thin oxide:1||charge injection:1||largearea solar cells:1||photoconductance:1||Kerfless silicon texturing:1||Aspect ratio:1||crystalline silicon solar cells:1||high efficiency:1||Ntype silicon:1||Unfiltered Plasma Ions:1||Chemical rounding:1||Uniformity:1||Al paste:1||power loss analysis:1||Accelerated test:1||Coppernickel electrode:1||photovoltaic module:1||Sequential deposition method:1||SolidPhase Epitaxy Emitter (SEE):1||SolidPhase Epitaxy:1||Na fault injection:1||wormlike defect:1||particle velocity:1||Xray photoelectron spectroscopy:1||gas removal:1||electrochemistry:1||monolithic tandem solar cell:1||wrinkles:1||morphologies:1||ZIF67:1||Screenprinted contact:1||waste:1||bifacial module:1||RF sputtering:1||Current mismatch:1||carbon oxidation:1||TOPCon:1||solutionprocessed GIGS:1||trapping effect:1||grain boundary:1||Acidic etching:1||Kerfless wafer:1||doublediode model:1||temperature dependence:1||recombination current density:1||crystalline silicon (cSi) solar cell:1||kerfless silicon texturing:1||Sputtering:1||Large area:1||doping:1||fieldeffect passivation:1||chemical passivation:1||Boron Emitter:1||IBC Solar Cells:1||gapless doping:1||flexible transparent electrode:1||front metal pattern:1||QSSPC:1||Selective emitter:1||Contact resistivity:1||ideality factor:1||partial shading:1||polymer substrate:1||coldspray:1||pecvd:1||Wearable supercapacitors:1||Solar to chemical conversion:1||polymer:1||Multicrystalline solar cells:1||flowcell:1||cotton fabric:1||Bifacial cell:1||PV carport:1||Binder free:1||Dodecahedral structure:1||Performance analysis:1||photovoltaic (PV) module:1||Composite:1||Supersonic cold spray:1||Superhydrophobicity:1||lifetime:1||alkali element:1||parasitic resistance:1||solar energy:1||compact TiO2:1||hydrogenation:1||screen printing:1||High efficiency:1||Rear Passivation Layer:1||Optimization with Simulation:1||AlOx passivation:1||Rear passivation:1||Solar Cell Cost Analysis:1||ion implantation:1||Climatic data:1||SiNx:1||pType Silicon Solar Cell:1||Auger Recombination:1||Conversion rate:1||PV Modules:1||Silicon solar cell:1||Current injection:1||ZnO polyhedron:1||chalcopyrite:1||perovskite solar cell:1||Coloured BIPV system:1||NiGa2S4 nanosheets:1||Metalligand matrix:1||separation:1||environment:1||Bifacial module:1||green H<sub>2</sub>:1||Hanji:1||nPERC cell:1||thin film solar cells:1||PERC:1||Crystalline silicon solar cells:1||nitrogendoped carbon quantum dots:1||energy policy:1||kerfless wafer:1||carrierselective contact cell:1||titanium oxide:1||band alignment:1||holeblocking layer:1||Interface passivation:1||Crystalline Silicon Solar Cells:1||AI Rear Metallization:1||PbI2:1||PlasmaEnhanced Chemical Vapor Deposition Frequency:1||potential induced degradation:1||Thermal stability:1||AntiReflection Coating:1||measurement:1||light IV:1||Ga)Se2 module:1||flexible transparent conducting electrode:1||phosphorus emitter:1||silicon nitride:1||Electron density:1||Cotton fabric:1||buried junction:1||organic:1||nickel silicide:1||Damage removal etching:1||NO:1||Lowtemperature:1||Lithiumion battery:1||Bimetallic:1||recycling:1||carport system:1||Tin oxide:1||Electron transport layer:1||Machine learning:1||Passivating contact:1||FeMoO4:1||ZnO:1||Cellulose paper:1||Supersonic spraying:1||historical analysis:1||absorber peeloff:1||acidic texturing:1||cationization:1||energy R&D:1||solar markets:1||heterojunction:1||Polysilicon:1||Boron Molecular Ion Implantation:1||Firing Process:1||PType Silicon Solar Cell:1||Aluminum silicon eutectic paste:1||IBC solar cells:1||wetting layer:1||resistance loss:1||POCl3:1||Doping Concentration:1||Surface Damage:1||Antireflection coating:1||Room Temperature Curing:1||pType crystalline solar cells:1||Al back contact:1||Manganese oxide:1||Ag dendrites:1||chemical bath deposition:1||perovskite/silicon:1||MOCVD:1||crystalline silicon:1||solar cells:1||tandem:1||Screenprinted Ag contact:1||homojunction solar cell:1||commercialization:1||additive engineering:1||Si/perovskite fourterminal tandem solar cells:1||Cubased paste:1||Performance reliability:1||renewable energy:1||energy yield:1||Tunnel junction:1||field effect passivation:1||delamination:1||hydrogen passivation:1||fill factor loss analysis:1||quasi steadystate photoconductance:1||Acidic texturing:1||electronselective contact:1||Textured silicon:1||antireflection:1||Nafion:1||passivating contact:1||Back Surface Field:1||Bifacial nPERT solar cell:1||PERC solar cells:1||counter doping:1||ultrathin film:1||shading loss:1||Minority Carrier Lifetime:1||Silicon Nitride:1||ntype silicon solar cell:1||bypass diode:1||thin film:1||passivation:1||amorphous silicon:1||tin oxide:1||potentialinduced degradation:1||n(+) polySi contact:1||Byproducts:1||Reactive ion etching:1||carbon nanotube:1||widebandgap perovskite solar cells:1||semitransparent perovskite solar cells:1||Energy yield:1||Monofacial module:1||Monofacial cell:1||PVsyst:1||Nickel:1||Electrodeposition, Energy storage device:1||Bifaciality:1||Freestanding electrode:1||biochar:1||leaching:1||charge distribution:1||plasma charging:1||Resistance:1||silicon oxide:1||radio frequency (RF) magnetron sputtering:1||crystalline Si solar cells:1||metallization:1||Strontium oxide:1||Microphotoluminescence:1||Reflectance:1||Calculation:1||Pyramid texturing:1||p(+)emitter:1||Gas Flow Rate:1||Field degradation prediction:1||Perovskite Solar Cell:1||Solar Cell:1||Al2O3:1||Annealing Effect:1||Silicon oxynitride:1||Stack passivation:1||AntiSoiling Coating:1||Phosphorus:1||Damage:1||reliability:1||sin(x):h:1||reflectance:1||Morphology:1||Photovoltaicelectrochemical system:1||CIGS solar cell:1||MOCVDprepared CIGS:1||perovskite:1||silicon tandem solar cells:1||NiOx:1||hydrothermal process:1||wearable supercapacitor:1||characterization of thinfilm solar cells:1||direct contact of p(+ )silicon and SnO2:1||Photovoltaic industry:1||Flexible supercapacitor:1||Cu–Ag coreShell:1||Energy storage device:1||Materials from the Lavoisier Institute (MIL):1||ZnFe2O4 nanosheet:1||current mismatch:1||biochar oxidation:1||Fe2O3:1||Piezoelectric nanogenerator:1||photovoltaic:1||PTFE:1||

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