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전체 187건 중 131번부터 140번까지의 결과를 표시합니다.

Conference

Pushing the Performance Limits of SiGe HBT Technology

Rieh, Jae-Sung

Conference

SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications (invited)

Rieh, Jae-Sung

Conference

A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures

Rieh, Jae-Sung

Conference

A 0.13 μm BiCMOS technology featuring a 200/280 GHz (fT / fmax) SiGe HBT

Rieh, Jae-Sung

Conference

Pushing the frequency envelope using ultra-fast SiGe HBTs with fT / fmax above 200 GHz

Rieh, Jae-Sung

Conference

SiGe HBTs with cut-off frequency of 350GHz

Rieh, Jae-Sung

Conference

A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology

Rieh, Jae-Sung

대한민국

Conference

A 24 GHz Mixer in 0.13-um RFCMOS Technology

Rieh, Jae-Sung

Conference

A V-band Common-Source Low Noise Amplifier in a 0.13 um RFCMOS Technology

Rieh, Jae-Sung

일본

Conference

Scaling toward 300GHz fT / fmax SiGe transistors

Rieh, Jae-Sung

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선택된 필터

Pushing the Performance Limits of SiGe HBT Technology

SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications (invited)

A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures

A 0.13 μm BiCMOS technology featuring a 200/280 GHz (fT / fmax) SiGe HBT

Pushing the frequency envelope using ultra-fast SiGe HBTs with fT / fmax above 200 GHz

SiGe HBTs with cut-off frequency of 350GHz

A V-band Injection-Locked Frequency Divider with Low Supply Voltage in 0.13-μm Si RFCMOS Technology

A 24 GHz Mixer in 0.13-um RFCMOS Technology

A V-band Common-Source Low Noise Amplifier in a 0.13 um RFCMOS Technology

Scaling toward 300GHz fT / fmax SiGe transistors