Potential induced degradation(PID) of crystalline silicon solar modules
- Authors
- Bae, S.; Oh, W.; Kim, S.M.; Kim, Y.D.; Park, S.; Kang, Y.; Lee, H.; Kim, D.
- Issue Date
- 2014
- Publisher
- Korea Federation of Science and Technology
- Keywords
- High voltage stress; Photovoltaic modules; Potential induced degradation; Reliability
- Citation
- Korean Journal of Materials Research, v.24, no.6, pp.326 - 337
- Indexed
- SCOPUS
KCI
- Journal Title
- Korean Journal of Materials Research
- Volume
- 24
- Number
- 6
- Start Page
- 326
- End Page
- 337
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/100788
- DOI
- 10.3740/MRSK.2014.24.6.326
- ISSN
- 1225-0562
- Abstract
- The use of solar energy generation is steadily increasing, and photovoltaic modules are connected in series to generate higher voltage and power. However, solar panels are exposed to high-voltage stress (up to several hundreds of volts) between grounded module frames and the solar cells. Frequent high-voltage stress causes a power-drop in the modules, and this kind of degradation is called potential induced degradation (PID). Due to PID, a significant loss of power and performance has been reported in recent years. Many groups have suggested how to prevent or reduce PID, and have tried to determine the origin and mechanism of PID. Even so, the mechanism of PID is still unclear. This paper is focused on understanding the PID of crystalline-silicon solar cells and modules. A background for PID, as well as overviews of research on factors accelerating PID, mechanisms involving sodium ions, PID test methods, and possible solutions to the problem of PID, are covered in this paper. © Materials Research Society of Korea.
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Collections - Graduate School of Energy and Environment (KU-KIST GREEN SCHOOL) > Department of Energy and Environment > 1. Journal Articles
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