Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam, I. | - |
dc.contributor.author | Hong, B. | - |
dc.contributor.author | Kim, M. | - |
dc.contributor.author | Shin, J. | - |
dc.contributor.author | Song, I. | - |
dc.contributor.author | Kim, D. M. | - |
dc.contributor.author | Hwang, S. | - |
dc.contributor.author | Kim, S. | - |
dc.date.accessioned | 2021-09-05T18:06:39Z | - |
dc.date.available | 2021-09-05T18:06:39Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-12-02 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101328 | - |
dc.description.abstract | We modeled and extracted the distribution of interface trap density by grafted molecules on the surface of a silicon nanowire field-effect transistor (SNWFET). The subthreshold current model was employed, and the capacitive coupling model of ideality factor was simplified, using a fully depleted SNWFET. We applied the analytical model to p-channel SNWFET with porphyrin, and extracted the distribution of the molecular interface states. There were 748 and 474 traps (average value) in length (L) = 300 nm and L = 500 nm devices, respectively. The trap energy was in the range of 0.27-0.35 eV. (C) 2013 AIP Publishing LLC. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | MATERIALS SCIENCE | - |
dc.title | Capacitive coupling model and extraction of the molecular interface states in porphyrin-silicon nanowire hybrid field-effect transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S. | - |
dc.identifier.doi | 10.1063/1.4834995 | - |
dc.identifier.scopusid | 2-s2.0-84889797298 | - |
dc.identifier.wosid | 000328634900072 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.103, no.23 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 103 | - |
dc.citation.number | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | MATERIALS SCIENCE | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea+82-2-3290-2963
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.