Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector
- Authors
- Park, Jae-Seong; Han, Jaecheon; Han, Jae-Woong; Seo, Heonjin; Oh, Jung-Tak; Seong, Tae-Yeon
- Issue Date
- 12월-2013
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Near-ultraviolet light-emitting diode; Ag ohmic reflector; In overlayer; Thermal stability
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.64, pp.7 - 14
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 64
- Start Page
- 7
- End Page
- 14
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101474
- DOI
- 10.1016/j.spmi.2013.09.019
- ISSN
- 0749-6036
- Abstract
- We report on the improved performance of near-ultraviolet (385 nm) InGaN/GaN multi-quantum well light emitting diodes (LEDs) by enhancing the thermal and electrical properties of Ag-based reflector. It is shown that after annealing at 500 degrees C, indium (In)-overlaid Ag contact exhibits considerably higher reflectivity at 385 nm than Ag only contact. After annealing at 500 degrees C, both the Ag only and In-overlaid Ag contacts are ohmic with a specific contact resistance of 6.7 x 10(-4) and 8.7 x 10(-5) Omega cm(2), respectively. Near-UV (385 nm) LEDs fabricated with annealed Ag only and In-overlaid Ag reflectors show a forward-bias voltage of 3.4 and 3.37 V at an injection current of 20 mA, respectively. The LEDs with the annealed In-overlaid Ag reflector exhibit 24.7% higher light output power (at 20 mA) than the LEDs with the 500 degrees C-annealed Ag only reflector. X-ray photoemission spectroscopy was performed to understand the improved electrical properties of the In-overlaid Ag reflectors. The enhanced thermal stability of In-overlaid Ag reflector is also briefly described. (C) 2013 Elsevier Ltd. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.