Dopant Profile Model in a Shallow Germanium n(+)/p Junction
- Authors
- Baek, Jung Woo; Shim, Jaewoo; Park, Jin-Hong; Jung, Woo-Shik; Yu, Hyun-Yong
- Issue Date
- 11월-2013
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Dopant profile; Shallow junction; Germanium n(+)/p
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.10, pp.L1855 - L1858
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 63
- Number
- 10
- Start Page
- L1855
- End Page
- L1858
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101802
- DOI
- 10.3938/jkps.63.1855
- ISSN
- 0374-4884
- Abstract
- A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n(+)/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pile-up caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.
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