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New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Dae-Young | - |
| dc.contributor.author | Park, So Jeong | - |
| dc.contributor.author | Mouis, Mireille | - |
| dc.contributor.author | Barraud, Sylvain | - |
| dc.contributor.author | Kim, Gyu-Tae | - |
| dc.contributor.author | Ghibaudo, Gerard | - |
| dc.date.accessioned | 2021-09-05T19:52:33Z | - |
| dc.date.available | 2021-09-05T19:52:33Z | - |
| dc.date.created | 2021-06-15 | - |
| dc.date.issued | 2013-11 | - |
| dc.identifier.issn | 0038-1101 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101814 | - |
| dc.description.abstract | A new and simple method for the extraction of electrical parameters in junctionless transistors (JLTs) is presented. The bulk channel mobility (mu(bulk)) and flat-band voltage (V-fb) were successfully extracted from the new method, based on a linear dependence between the inverse of transconductance squared (1/g(m)(2)) vs gate voltage in the partially depleted operation regime (V-th < V-fb < V-fb). The validity of the new method is also proved by 2D numerical simulation and newly defined Maserjian's-like function for g(m) of JLT devices. (C) 2013 Elsevier Ltd. All rights reserved. | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
| dc.subject | NANOWIRE TRANSISTORS | - |
| dc.subject | MOS STRUCTURES | - |
| dc.subject | SILICON | - |
| dc.title | New method for the extraction of bulk channel mobility and flat-band voltage in junctionless transistors | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
| dc.identifier.doi | 10.1016/j.sse.2013.08.003 | - |
| dc.identifier.scopusid | 2-s2.0-84883501852 | - |
| dc.identifier.wosid | 000327291800021 | - |
| dc.identifier.bibliographicCitation | SOLID-STATE ELECTRONICS, v.89, pp.139 - 141 | - |
| dc.relation.isPartOf | SOLID-STATE ELECTRONICS | - |
| dc.citation.title | SOLID-STATE ELECTRONICS | - |
| dc.citation.volume | 89 | - |
| dc.citation.startPage | 139 | - |
| dc.citation.endPage | 141 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordPlus | NANOWIRE TRANSISTORS | - |
| dc.subject.keywordPlus | MOS STRUCTURES | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordAuthor | Junctionless transistors (JLTs) | - |
| dc.subject.keywordAuthor | Extraction method | - |
| dc.subject.keywordAuthor | Bulk channel mobility | - |
| dc.subject.keywordAuthor | Flat-band voltage | - |
| dc.subject.keywordAuthor | 2D numerical simulation | - |
| dc.subject.keywordAuthor | Maserjian&apos | - |
| dc.subject.keywordAuthor | s-like function for g(m) | - |
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