366-kS/s 1.09-nJ 0.0013-mm(2) Frequency-to-Digital Converter Based CMOS Temperature Sensor Utilizing Multiphase Clock
- Authors
- Kim, Kisoo; Lee, Hokyu; Kim, Chulwoo
- Issue Date
- 10월-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Compensation; frequency-to-digital converter; oscillator; PVT variation; temperature sensor
- Citation
- IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, v.21, no.10, pp.1950 - 1954
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Volume
- 21
- Number
- 10
- Start Page
- 1950
- End Page
- 1954
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101935
- DOI
- 10.1109/TVLSI.2012.2220389
- ISSN
- 1063-8210
- Abstract
- A smart temperature sensor in 65-nm CMOS, utilizing CMOS ring oscillators, consumes 1.09 nJ at a conversion rate of 366 kS/s. This is achieved by the direct temperature-to-digital conversion method implemented in the frequency-to-digital converter. The algorithm utilized in the fine code generator makes it possible to increase the resolution of the sensor efficiently. Compared to previous work, this brief shows lower V-DD operation. After one point calibration, the chip-to-chip spread is +2.7 similar to -2.9 degrees C over the temperature range of -40 degrees C to 110 degrees C.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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