Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chung, Juho | - |
dc.contributor.author | Lee, Changbum | - |
dc.contributor.author | Yoon, Wooyoung | - |
dc.date.accessioned | 2021-09-05T20:32:48Z | - |
dc.date.available | 2021-09-05T20:32:48Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2013-10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/101965 | - |
dc.description.abstract | Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 degrees C/min. For the samples that were heated below 1390 degrees C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM. (C) 2013 The Japan Society of Applied Physics | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | HYDROMETALLURGICAL PURIFICATION | - |
dc.subject | POLYCRYSTALLINE SILICON | - |
dc.subject | REMOVAL | - |
dc.subject | IRON | - |
dc.subject | IMPURITIES | - |
dc.subject | SI | - |
dc.title | Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Wooyoung | - |
dc.identifier.doi | 10.7567/JJAP.52.10MB04 | - |
dc.identifier.wosid | 000325946500018 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 52 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | HYDROMETALLURGICAL PURIFICATION | - |
dc.subject.keywordPlus | POLYCRYSTALLINE SILICON | - |
dc.subject.keywordPlus | REMOVAL | - |
dc.subject.keywordPlus | IRON | - |
dc.subject.keywordPlus | IMPURITIES | - |
dc.subject.keywordPlus | SI | - |
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