Effect of Heating Rate on the Refining of Metallurgical-Grade Silicon during Fractional Melting
- Authors
- Chung, Juho; Lee, Changbum; Yoon, Wooyoung
- Issue Date
- 10월-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10
- Indexed
- SCIE
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 52
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/101965
- DOI
- 10.7567/JJAP.52.10MB04
- ISSN
- 0021-4922
- Abstract
- Silicon was purified using fractional melting (FM), which is a more effective refining method than fractional solidification. Changes in the silicon microstructure during FM were observed using a scanning electron microscope (SEM) and an electron probe microanalyzer (EPMA). Purity of each sample was investigated using inductively coupled plasma atomic emission spectrometry (ICP-AES) to determine the effects of various heating rates on the efficiency of FM. A refining ratio of 97.28% was the best result that could be obtained for the sample that was heated at a rate of 15 degrees C/min. For the samples that were heated below 1390 degrees C lower heating rate resulted in higher refining efficiency. Acid-leaching yielded 99.98% pure silicon samples after FM. (C) 2013 The Japan Society of Applied Physics
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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