Electrical characterization of Co-60 gamma radiation-exposed InAlN/GaN high electron mobility transistors
- Authors
- Kim, Hong-Yeol; Kim, Jihyun; Liu, Lu; Lo, Chien-Fong; Ren, Fan; Pearton, Stephen J.
- Issue Date
- 9월-2013
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
- Volume
- 31
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102226
- DOI
- 10.1116/1.4820129
- ISSN
- 1071-1023
- Abstract
- In0.17Al0.83N/GaN high electron mobility transistors (HEMTs) were cumulatively subjected to Co-60 gamma-ray irradiation doses up to 500 Mrad. Source-drain current-voltage characteristics (I-DS-V-DS) showed little change after lower dose gamma-ray irradiations (< 200 Mrad). However, the electrical properties were significantly degraded after 500 Mrad irradiations, indicating that the radiation-induced damage near the active region of the devices was severe. The saturation current level at V-GS = 0V was degraded by 48% after 500 Mrad irradiation. The effective carrier removal rate was not linear with dose, but was 0.54 x 10(10) cm(-2) Mrad(-1) in the range from 200 to 500 Mrad. The cumulative gamma-ray irradiation of In0.17Al0.83N/GaN HEMTs caused much larger reductions in drain-source current compared to AlGaN/GaN devices exposed under the same conditions. (C) 2013 American Vacuum Society.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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