Review of radiation damage in GaN-based materials and devices
- Authors
- Pearton, Stephen J.; Deist, Richard; Ren, Fan; Liu, Lu; Polyakov, Alexander Y.; Kim, Jihyun
- Issue Date
- 9월-2013
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.31, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 31
- Number
- 5
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102277
- DOI
- 10.1116/1.4799504
- ISSN
- 0734-2101
- Abstract
- A review of the effects of proton, neutron, gamma-ray, and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. (C) 2013 American Vacuum Society.
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Collections - College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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