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Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films
- Issue Date
- 9월-2013
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Activation energy of traps; resistive random access memories (RRAM); resistive switching; silicon nitride; work function difference
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.34, no.9, pp.1181 - 1183
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 34
- Number
- 9
- Start Page
- 1181
- End Page
- 1183
- ISSN
- 0741-3106
- Abstract
- In this letter, the effect of the work function difference between various top electrodes (TE-Ni, W, Ti, and Al) and the Pt bottom electrode, Delta Phi(M), on the resistive switching (RS) of SiN thin films was investigated. The cells with W and Ti TEs showed stable RS, but others failed to show RS. In particular, the Ti TE exhibited low operating currents (similar to 2 mu A) and good retention properties (< similar to 10(4) s at 85 degrees C). On the basis of the analysis of conduction mechanisms, it is found that stable RS of SiN films might be strongly related to the activation energy of traps induced by Delta Phi(M). Thus, the RS properties of the SiN films can be improved by engineering Delta Phi(M) without additional processes.
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