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Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Song, Min Yeong | - |
| dc.contributor.author | Seo, Yujeong | - |
| dc.contributor.author | Park, Soyun | - |
| dc.contributor.author | Lee, Jae Hyuk | - |
| dc.contributor.author | An, Ho-Myoung | - |
| dc.contributor.author | Kim, Tae Geun | - |
| dc.date.accessioned | 2021-09-05T22:25:32Z | - |
| dc.date.available | 2021-09-05T22:25:32Z | - |
| dc.date.created | 2021-06-14 | - |
| dc.date.issued | 2013-09 | - |
| dc.identifier.issn | 1533-4880 | - |
| dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102383 | - |
| dc.description.abstract | The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles). | - |
| dc.language | English | - |
| dc.language.iso | en | - |
| dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
| dc.title | Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
| dc.identifier.doi | 10.1166/jnn.2013.7701 | - |
| dc.identifier.scopusid | 2-s2.0-84885455658 | - |
| dc.identifier.wosid | 000323628900050 | - |
| dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.9, pp.6212 - 6215 | - |
| dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
| dc.citation.volume | 13 | - |
| dc.citation.number | 9 | - |
| dc.citation.startPage | 6212 | - |
| dc.citation.endPage | 6215 | - |
| dc.type.rims | ART | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Chemistry | - |
| dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
| dc.relation.journalResearchArea | Materials Science | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
| dc.subject.keywordAuthor | Resistive Switching | - |
| dc.subject.keywordAuthor | ZnO Nanorod | - |
| dc.subject.keywordAuthor | Voltage Distribution | - |
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Related Researcher
- Kim, Tae geun
- College of Engineering (School of Electrical Engineering)