Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Ji Hoon | - |
dc.contributor.author | Hwang, Sung-Min | - |
dc.contributor.author | Seo, Yong Gon | - |
dc.contributor.author | Baik, Kwang Hyeon | - |
dc.contributor.author | Park, Jung Ho | - |
dc.date.accessioned | 2021-09-05T23:26:46Z | - |
dc.date.available | 2021-09-05T23:26:46Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-08 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102640 | - |
dc.description.abstract | The effects of different SiNx interlayers on the structural and electrical properties of nonpolar Si-doped a-plane (11-20) GaN films grown on r-plane (1-102) sapphire were investigated. The surface roughness depends strongly on the SiNx coverage, deposition temperature and number of SiNx layers. The in-plane anisotropy of on-axis x-ray rocking curves (XRCs) (full width at half-maximum) was significantly decreased by the introduction of multiple SiNx-treated GaN interlayers, indicating coherently scattering domains of uniform size. Off-axis XRC measurements were also employed to investigate the effects on the mosaic twist corresponding to edge dislocation and the I-1-type basal-plane stacking fault (BSF) density. Hall effect measurement showed that the electrical conductivity was the highest when multiple SiNx/GaN interlayers were employed. The measured sheet resistances (R-sh) along the c-axis were higher than those along the m-axis. These anisotropic conductivities could be explained by BSFs acting as carrier scattering centers. The ratios of R-sh along the two in-plane orientations also correlated well with the BSF densities. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | LIGHT-EMITTING-DIODES | - |
dc.subject | STACKING-FAULTS | - |
dc.subject | REDUCTION | - |
dc.subject | SEMICONDUCTORS | - |
dc.title | Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jung Ho | - |
dc.identifier.doi | 10.1088/0268-1242/28/8/085007 | - |
dc.identifier.scopusid | 2-s2.0-84880304658 | - |
dc.identifier.wosid | 000321701100010 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.8 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 28 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | STACKING-FAULTS | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.