Structural and electrical anisotropies of Si-doped a-plane (11-20) GaN films with different SiNx interlayers
- Authors
- Kim, Ji Hoon; Hwang, Sung-Min; Seo, Yong Gon; Baik, Kwang Hyeon; Park, Jung Ho
- Issue Date
- 8월-2013
- Publisher
- IOP PUBLISHING LTD
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.28, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 28
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/102640
- DOI
- 10.1088/0268-1242/28/8/085007
- ISSN
- 0268-1242
- Abstract
- The effects of different SiNx interlayers on the structural and electrical properties of nonpolar Si-doped a-plane (11-20) GaN films grown on r-plane (1-102) sapphire were investigated. The surface roughness depends strongly on the SiNx coverage, deposition temperature and number of SiNx layers. The in-plane anisotropy of on-axis x-ray rocking curves (XRCs) (full width at half-maximum) was significantly decreased by the introduction of multiple SiNx-treated GaN interlayers, indicating coherently scattering domains of uniform size. Off-axis XRC measurements were also employed to investigate the effects on the mosaic twist corresponding to edge dislocation and the I-1-type basal-plane stacking fault (BSF) density. Hall effect measurement showed that the electrical conductivity was the highest when multiple SiNx/GaN interlayers were employed. The measured sheet resistances (R-sh) along the c-axis were higher than those along the m-axis. These anisotropic conductivities could be explained by BSFs acting as carrier scattering centers. The ratios of R-sh along the two in-plane orientations also correlated well with the BSF densities.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.