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Nanoparticle-based flexible inverters with a vertical structure

Authors
Yun, JunggwonCho, KyoungahKim, Sangsig
Issue Date
31-7월-2013
Publisher
ELSEVIER SCIENCE SA
Keywords
II-VI semiconductors; Electronic circuits; Nanocrystals; Flexible substrate
Citation
THIN SOLID FILMS, v.539, pp.256 - 259
Indexed
SCIE
SCOPUS
Journal Title
THIN SOLID FILMS
Volume
539
Start Page
256
End Page
259
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/102661
DOI
10.1016/j.tsf.2013.04.147
ISSN
0040-6090
Abstract
We report the construction and characterization of a representative vertical inverter with a nanoparticle (NP)-based p-channel thin-film transistor (TFT) and a NP-based n-channel TFT on a flexible substrate. The vertical inverter consists of a p-type HgTe NP-based TFT on the first-stair layer and an n-type HgSe NP-based TFT on the second-stair layer. In the vertical inverter, an isolation layer made of polyvinyl alcohol prevents the cross talk between these TFTs. The vertical inverter exhibits the typical inverter characteristics with a gain of 4, and the reproducible operation was obtained in the upward and downward bending states, as well as in the flat state. Moreover, the inverter characteristics were maintained even after 1000 bending cycles with 0.7% strain. (C) 2013 Elsevier B.V. All rights reserved.
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공과대학 (전기전자공학부)
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