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Microstructures and Microwave Dielectric Properties of Bi2O3-Deficient Bi12SiO20 Ceramics
- Authors
- Jeong, Byoung-Jik; Joung, Mi-Ri; Kweon, Sang-Hyo; Kim, Jin-Seong; Nahm, Sahn; Choi, Ji-Won; Hwang, Seong-Ju
- Issue Date
- Jul-2013
- Publisher
- WILEY
- Citation
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.96, no.7, pp.2225 - 2229
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY
- Volume
- 96
- Number
- 7
- Start Page
- 2225
- End Page
- 2229
- ISSN
- 0002-7820
- Abstract
- The Microstructure and microwave dielectric properties of Bi2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825 degrees C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si3O12 secondary phase. The nominal composition of Bi11.8SiO19.7 ceramics sintered at 825 degrees C for 4h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: epsilon(r)=39, Qxf=74000GHz, and (f) = -14.1ppm/degrees C. Moreover, this ceramic did not react with Ag at 825 degrees C.
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