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Microstructures and Microwave Dielectric Properties of Bi2O3-Deficient Bi12SiO20 Ceramics

Authors
Jeong, Byoung-JikJoung, Mi-RiKweon, Sang-HyoKim, Jin-SeongNahm, SahnChoi, Ji-WonHwang, Seong-Ju
Issue Date
7월-2013
Publisher
WILEY
Citation
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, v.96, no.7, pp.2225 - 2229
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
Volume
96
Number
7
Start Page
2225
End Page
2229
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/102762
DOI
10.1111/jace.12323
ISSN
0002-7820
Abstract
The Microstructure and microwave dielectric properties of Bi2O3-deficient Bi12SiO20 ceramics were investigated. A small amount of unreacted Bi2O3 phase melted during sintering at 825 degrees C and assisted with densification and grain growth in all samples. The melted Bi2O3 reacted with remnant SiO2 during cooling to form a Bi4Si3O12 secondary phase. The nominal composition of Bi11.8SiO19.7 ceramics sintered at 825 degrees C for 4h had a high relative density of 97% of the theoretical density, and good microwave dielectric properties: epsilon(r)=39, Qxf=74000GHz, and (f) = -14.1ppm/degrees C. Moreover, this ceramic did not react with Ag at 825 degrees C.
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