Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature
DC Field | Value | Language |
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dc.contributor.author | Choi, Jun Young | - |
dc.contributor.author | Kim, SangSig | - |
dc.contributor.author | Lee, Sang Yeol | - |
dc.date.accessioned | 2021-09-06T00:19:08Z | - |
dc.date.available | 2021-09-06T00:19:08Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-07 | - |
dc.identifier.issn | 1738-8090 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102872 | - |
dc.description.abstract | The effect of zirconium contents (from 0.01 to 1.6 molar ratios) on the change of threshold voltage (V (th) ) and field effect mobility (A mu (FE) ) of solution processed zirconium silicon-gallium-zinc oxide (Zr-SIZO) thin film transistors (TFTs) has been reported. We have studied the effect of Zr contents on the threshold voltage (V (th) ) and subthreshold swing (S.S) of Zr-SIZO TFTs. As the content of Zr ions increased in Zr-SIZO, the threshold voltage shifted from -4.8 to 4.4 V. Also, off-current in the TFTs decreased mainly because Zr is more easily oxidized than Si, In, or Zn since it has a low standard electrical potential (SEP). Thus, Zr could be expected to be a carrier suppressor in the Zr-SIZO system. This suggests that the performance of SIZO TFTs can be controlled by the Zr molar ratio in the Zr-SIZO based TFTs. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | KOREAN INST METALS MATERIALS | - |
dc.subject | OXIDE | - |
dc.subject | FABRICATION | - |
dc.title | Variation of subthreshold swing of solution-processed Zr-Si-In-Zn-O thin film transistor at low annealing temperature | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, SangSig | - |
dc.identifier.doi | 10.1007/s13391-013-0045-x | - |
dc.identifier.scopusid | 2-s2.0-84880425913 | - |
dc.identifier.wosid | 000321958500027 | - |
dc.identifier.bibliographicCitation | ELECTRONIC MATERIALS LETTERS, v.9, no.4, pp.489 - 491 | - |
dc.relation.isPartOf | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.title | ELECTRONIC MATERIALS LETTERS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 489 | - |
dc.citation.endPage | 491 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001788838 | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.description.journalRegisteredClass | other | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | SiO | - |
dc.subject.keywordAuthor | threshold voltage | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | oxide thin film transistor | - |
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