Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization
DC Field | Value | Language |
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dc.contributor.author | Jung, Hyun-Wook | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-06T00:42:54Z | - |
dc.date.available | 2021-09-06T00:42:54Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-06-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102985 | - |
dc.description.abstract | Electrical properties of poly-Ge films achieved by SPC and MIC methods were investigated through XRD and Hall-effect measurements. In particular, dependency of carrier concentration and mobility on phosphorus (P) and its relationship with Ge vacancy defects working as p-type dopants are studied in poly-Ge samples with varying P implant dose. The existence of P atoms in alpha-Ge affects the grain size of crystallized poly-Ge films, subsequently changing their carrier concentration and mobility. High dose of P atoms in SPC and MIC poly-Ge samples successfully converts the type of poly-Ge from p (hole) to n (electron). As a result, n-type carrier concentrations of similar to 10(17) in SPC and similar to 10(16) in MIC poly-Ge film (highly doped) are obtained, respectively demonstrating highest mobility of similar to 35 cm(2)/V s and similar to 30 cm(2)/V s at 500 degrees C and 400 degrees C. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.jallcom.2013.02.023 | - |
dc.identifier.scopusid | 2-s2.0-84874627765 | - |
dc.identifier.wosid | 000316683700038 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.561, pp.231 - 233 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 561 | - |
dc.citation.startPage | 231 | - |
dc.citation.endPage | 233 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordAuthor | Polycrystalline germanium | - |
dc.subject.keywordAuthor | Solid phase crystallization | - |
dc.subject.keywordAuthor | Metal induced crystallization | - |
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