Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode
DC Field | Value | Language |
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dc.contributor.author | Yang, Seong-Uk | - |
dc.contributor.author | Choi, Seung-Ha | - |
dc.contributor.author | Lee, Jongtaek | - |
dc.contributor.author | Kim, Jeehwan | - |
dc.contributor.author | Jung, Woo-Shik | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.contributor.author | Roh, Yonghan | - |
dc.contributor.author | Park, Jin-Hong | - |
dc.date.accessioned | 2021-09-06T00:43:02Z | - |
dc.date.available | 2021-09-06T00:43:02Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-06-05 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/102986 | - |
dc.description.abstract | One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15 nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300 degrees C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. On-current density (0.02 A/cm(2)) and on/off-current ratio (4 x 10(2)) were obtained in the junction annealed at 300 degrees C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15 nm and 30 nm thick n-IGZO samples. (C) 2013 Elsevier B. V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.jallcom.2013.02.012 | - |
dc.identifier.scopusid | 2-s2.0-84874636671 | - |
dc.identifier.wosid | 000316683700037 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.561, pp.228 - 230 | - |
dc.relation.isPartOf | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 561 | - |
dc.citation.startPage | 228 | - |
dc.citation.endPage | 230 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Metallurgy & Metallurgical Engineering | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Metallurgy & Metallurgical Engineering | - |
dc.subject.keywordAuthor | Gallium arsenide | - |
dc.subject.keywordAuthor | IGZO | - |
dc.subject.keywordAuthor | Hetero-junction | - |
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