Structural dependence of the piezoelectric properties of KNbO3 nanowires synthesized by the hydrothermal method
- Authors
- Joung, Mi-Ri; Seo, In-Tae; Kim, Jin-Seong; Xu, HaiBo; Han, Guifang; Kang, Min-Gyu; Kang, Chong-Yun; Yoon, Seok-Jin; Nahm, Sahn
- Issue Date
- 6월-2013
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Piezoelectricity; Nanowire; Perovskites; Synthesis
- Citation
- ACTA MATERIALIA, v.61, no.10, pp.3703 - 3708
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACTA MATERIALIA
- Volume
- 61
- Number
- 10
- Start Page
- 3703
- End Page
- 3708
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103179
- DOI
- 10.1016/j.actamat.2013.03.002
- ISSN
- 1359-6454
- Abstract
- Because of the presence of OH- and H2O in the KN unit cell, tetragonal KNbO3 (KN) nanowires were formed when the synthesis was carried out at 120 degrees C for 48 h. However, when the fabrication was conducted at high temperatures (>= 150 degrees C) or at 120 degrees C for a long period of time (>= 72 h), orthorhombic KN nanowires were formed. Moreover, the KN nanowires synthesized at 120 degrees C for 60 h showed a morphotropic phase boundary (MPB) structure in which both tetragonal and orthorhombic structures coexisted. Tetragonal, orthorhombic and MPB KN nanowires were also grown on the Nb5+-doped SrTiO3 substrate, and their d(33) values were measured for the first time. A tetragonal KN nanowire exhibited a d(33) value of 23.5 pm V-1, which is larger than that of the orthorhombic KN nanowire (11.6 pm V-1), probably because of the softening effect of the metal vacancies. The MPB KN nanowires exhibited a larger d33 value of 40.0 pm V-1. The d(33) values of KN nanowires increased to 104.5, 137.1 and 146.0 pm V-1 for the orthorhombic, tetragonal and MPB KN nanowires, respectively, after the KN nanowires were poled along the [1 0 0] direction by application of a DC voltage of 10 V. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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Collections - Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles
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