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Cu Ion Ink for a Flexible Substrate and Highly Conductive Patterning by Intensive Pulsed Light Sintering

Authors
Wang, Byung-YongYoo, Tae-HeeSong, Yong-WonLim, Dae-SoonOh, Young-Jei
Issue Date
22-5월-2013
Publisher
AMER CHEMICAL SOC
Keywords
Cu ion ink; flexible substrate; high electric conductivity; inkjet printing; rollerball pen; intensive pulsed light
Citation
ACS APPLIED MATERIALS & INTERFACES, v.5, no.10, pp.4113 - 4119
Indexed
SCIE
SCOPUS
Journal Title
ACS APPLIED MATERIALS & INTERFACES
Volume
5
Number
10
Start Page
4113
End Page
4119
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/103206
DOI
10.1021/am303268k
ISSN
1944-8244
Abstract
Direct printing techniques that utilize nanoparticles to mitigate environmental pollution and reduce the processing time of the routing and formation of electrodes have received much attention lately. In particular, copper (Cu) nanoink using Cu nanoparticles offers high conductivity and can be prepared at low cost. However, it is difficult to produce homogeneous nanoparticles and ensure good dispersion within the ink. Moreover, Cu particles require a sintering process over an extended time at a high temperature due to high melting temperature of Cu. During this process, the nanoparticles oxidize quickly in air. To address these problems, the authors developed a Cu ion ink that is free of Cu particles or any other impurities. It consequently does not require separate dispersion stability. In addition, the developed ink is environmentally friendly and can be sintered even at low temperatures. The Cu ion ink was sintered on a flexible substrate using intense pulsed light (IPL), which facilitates large-area, highspeed calcination at room temperature and at atmospheric pressures. As the applied light energy increases, the Cu2O phase diminishes, leaving only the Cu phase. This is attributed to the influence of formic acid (HCOOH) on the Cu ion ink. Only the Cu phase was observed above 40 J cm(-2). The Cu-patterned film after sintering showed outstanding electrical resistivity in a range of 3.21-5.27 mu Omega center dot cm at an IPL energy of 40-60 J cm(-2). A spiral-type micropattern with a line width of 160 mu m on a PI substrate was formed without line bulges or coffee ring effects. The electrical resistivity was 5.27 mu Omega center dot cm at an energy level of 40.6 J cm(-2).
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