Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O-2/CHF3 gas plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ham, Yong-Hyun | - |
dc.contributor.author | Shutov, Dmitriy Alexandrovich | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-06T01:37:21Z | - |
dc.date.available | 2021-09-06T01:37:21Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2013-05-15 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103232 | - |
dc.description.abstract | We investigated the effectiveness of CHF3 admixture in O-2 plasma for a low damage patterning process. We used inductively-coupled plasma (ICP) etching of parylene-C thin films with O-2/CHF3 gas mixtures. Plasma diagnostics were performed by using a double Langmuir probe. Also in order to examine the relationship between the plasma and surface energy, we attempted to conduct a simplified model-based analysis of the CHF3/O-2 plasma. The surface energy decreased as the admixture fraction increased with fluorocarbon containing gas. The decreased surface energy is related to the functional groups of CFx polymer at binding energy of around 290 eV and low ion physical damage. We observed that a small addition of CHF3 to O-2 plasma produced a high etch rate, low surface energy, and low roughness compared to pure oxygen plasma. (C) 2013 Elsevier B.V. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | POLYMER DIELECTRIC CHARACTERISTICS | - |
dc.subject | OXYGEN | - |
dc.subject | MODEL | - |
dc.subject | SILICON | - |
dc.subject | PERFORMANCE | - |
dc.subject | CHEMISTRY | - |
dc.subject | AR | - |
dc.title | Surface characteristics of etched parylene-C films for low-damaged patterning process using inductively-coupled O-2/CHF3 gas plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1016/j.apsusc.2013.02.033 | - |
dc.identifier.scopusid | 2-s2.0-84876415808 | - |
dc.identifier.wosid | 000317581700045 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.273, pp.287 - 292 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 273 | - |
dc.citation.startPage | 287 | - |
dc.citation.endPage | 292 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | POLYMER DIELECTRIC CHARACTERISTICS | - |
dc.subject.keywordPlus | OXYGEN | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CHEMISTRY | - |
dc.subject.keywordPlus | AR | - |
dc.subject.keywordAuthor | Parylene-C | - |
dc.subject.keywordAuthor | O-2/CHF3 | - |
dc.subject.keywordAuthor | Surface characteristics | - |
dc.subject.keywordAuthor | Etch, ICP | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.