Improved AlGaInP vertical emitting light-emitting diodes using direct printing
- Authors
- Cho, Joong-Yeon; Byeon, Kyeong-Jae; Kim, Jin-Seung; Lee, Heon
- Issue Date
- 1-5월-2013
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS LETTERS, v.38, no.9, pp.1573 - 1575
- Indexed
- SCIE
SCOPUS
- Journal Title
- OPTICS LETTERS
- Volume
- 38
- Number
- 9
- Start Page
- 1573
- End Page
- 1575
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103260
- DOI
- 10.1364/OL.38.001573
- ISSN
- 0146-9592
- Abstract
- In this study, we fabricated a high-brightness AlGaInP light-emitting diode (LED) using the direct printing technique and dry etching. In general, wet etching is used for surface roughening to improve the light extraction of AlGaInP red LEDs. However, a structure fabricated by wet etching has limited height and shows a tiled cone shape after the etching process due to the AlGaInP crystal structure. These limitations reduce the light extraction of the LED. As a result, we fabricated a perfectly cone-shaped pattern with high aspect ratio using direct printing by etching to maximize the LED light extraction efficiency. Compared to the red LED with a wet-etched structure, the patterning enhanced the light output power by 12% without electrical degradation. This enhanced light output power was maintained even after the packaging process. (C) 2013 Optical Society of America
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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