Si-Nanowire-Array-Based NOT-Logic Circuits Constructed on Plastic Substrates Using Top-Down Methods
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeon, Youngin | - |
dc.contributor.author | Kang, Jeongmin | - |
dc.contributor.author | Lee, Myeongwon | - |
dc.contributor.author | Moon, Taeho | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-06T01:44:32Z | - |
dc.date.available | 2021-09-06T01:44:32Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2013-05 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103277 | - |
dc.description.abstract | Si-nanowire (NW)-array-based NOT-logic circuits were constructed on plastic substrates. The Si-NW arrays were fabricated on a Si wafer through top down methods, including conventional photolithography and crystallographic wet etching, and transferred onto the plastic substrates. Two field-effect transistors were fabricated on a single Si-NW array composed of five nanowires aligned in parallel and connected in series to form NOT-logic circuits. The excellent flexibility of the fabricated device was confirmed by bending-cycling tests. The voltage-transfer curve of the NOT-logic circuits showed an inverting operation with a logic swing of similar to 92% and voltage gain of similar to 2.5. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | SINGLE-CRYSTAL SILICON | - |
dc.subject | THIN-FILM TRANSISTORS | - |
dc.subject | ELECTRONICS | - |
dc.subject | PHOTONICS | - |
dc.subject | RATES | - |
dc.subject | GLASS | - |
dc.title | Si-Nanowire-Array-Based NOT-Logic Circuits Constructed on Plastic Substrates Using Top-Down Methods | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1166/jnn.2013.7229 | - |
dc.identifier.wosid | 000319953300031 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3350 - 3353 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 13 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 3350 | - |
dc.citation.endPage | 3353 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SINGLE-CRYSTAL SILICON | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | PHOTONICS | - |
dc.subject.keywordPlus | RATES | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordAuthor | Silicon-Nanowire Array | - |
dc.subject.keywordAuthor | Top-Down Approach | - |
dc.subject.keywordAuthor | Field-Effect Transistor | - |
dc.subject.keywordAuthor | NOT-Logic Circuit | - |
dc.subject.keywordAuthor | Plastic Substrate | - |
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