Electrochemical Properties of Sn-Substituted LiMn2O4 Thin Films Prepared by Radio-Frequency Magnetron Sputtering
- Authors
- Kong, Woo Yeon; Yim, Haena; Yoon, Seok-Jin; Nahm, Sahn; Choi, Ji-Won
- Issue Date
- 5월-2013
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- LiMn2O4; Thin Film Battery; RF Magnetron Sputtering; Capacity; Cyclability
- Citation
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.13, no.5, pp.3288 - 3292
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
- Volume
- 13
- Number
- 5
- Start Page
- 3288
- End Page
- 3292
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103278
- DOI
- 10.1166/jnn.2013.7275
- ISSN
- 1533-4880
- Abstract
- The LiMn2O4 and LiSn0.0125Mn1.975O4 thin films were grown on Pt/Ti/SiO2/Si (100) substrate by RF magnetron sputtering. To obtain the structural stability and good cycle performance, deposition parameters, namely working pressure, sputtering gas ratio of Ar and O-2, post-annealing temperature were established. The structure and surface morphology of thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The electrochemical properties were estimated by two electrode half-cell test with WBCS 3000 (Wonatech, Korea) at constant current rate of 1 C-rate. The Sn substituted LiMn2O4 thin film deposited at 10 mtorr with mixture of argon and oxygen (Ar/O-2 = 3/1) and then annealed at 500 degrees C in O-2 atmosphere showed good cycle performance. The Sn substituted LiMn2O4 thin films showed larger capacity of similar to 30 mu Ah/mu m-cm(2) and higher cyclability than LiMn2O4 thin films.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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