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Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks

Authors
Kim, Su JinKim, Kyeong HeonKim, Tae Geun
Issue Date
8-4월-2013
Publisher
OPTICAL SOC AMER
Citation
OPTICS EXPRESS, v.21, no.7, pp.8062 - 8068
Indexed
SCIE
SCOPUS
Journal Title
OPTICS EXPRESS
Volume
21
Number
7
Start Page
8062
End Page
8068
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/103514
DOI
10.1364/OE.21.008062
ISSN
1094-4087
Abstract
In this study, reduced forward voltage and improved light output power of GaN-based vertical light-emitting diodes (VLEDs) incorporating single-walled carbon nanotube (SWNT)-networks is reported. The SWNT-networks were directly formed on a roughened (textured) n-GaN surface via a solution-processed dip-coating method. The surface-roughened VLEDs with the proposed SWNT-networks had a forward voltage of 3.84 V at 350 mA, lower than that of the surface-roughened VLEDs, and exhibited an increase in light output power by 12.9% at 350 mA compared to the surface-roughened VLEDs. These improved electrical and optical properties could be attributed to the SWNT-networks put on the roughened n-GaN surface, which increase the lateral current transport and create scattering of light through the formation of additional roughness. (c) 2013 Optical Society of America
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공과대학 (전기전자공학부)
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