Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells
DC Field | Value | Language |
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dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Sung, Yun Mo | - |
dc.contributor.author | Im, Hyunsik | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-06T03:44:33Z | - |
dc.date.available | 2021-09-06T03:44:33Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.issn | 1530-4388 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103782 | - |
dc.description.abstract | This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 10(4). The device also showed an endurance of > 10(9) cycles and a retention time of > 10(4) s at 85 degrees C. The temperature-dependent studies of ON/OFF states show that metallic conduction is responsible for ON state, whereas semiconducting or insulating behaviors are clearly observed from OFF-state devices. These results show that ZrN-based RSM can be used as a promising RSM device. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | Bipolar Resistive-Switching Phenomena and Resistive-Switching Mechanisms Observed in Zirconium Nitride-Based Resistive-Switching Memory Cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Sung, Yun Mo | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/TDMR.2012.2237404 | - |
dc.identifier.scopusid | 2-s2.0-84874965240 | - |
dc.identifier.wosid | 000316262700032 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.13, no.1, pp.252 - 257 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - |
dc.citation.title | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | - |
dc.citation.volume | 13 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 252 | - |
dc.citation.endPage | 257 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | Atomic force microscopy (AFM) | - |
dc.subject.keywordAuthor | resistive switching (RS) | - |
dc.subject.keywordAuthor | SCLC | - |
dc.subject.keywordAuthor | ZrN | - |
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