Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Su Jin | - |
dc.contributor.author | Jeong, Tak | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-06T03:58:48Z | - |
dc.date.available | 2021-09-06T03:58:48Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103865 | - |
dc.description.abstract | The authors report reduced contact resistance and improved thermal stability of Ti/Al ohmic contacts to N-face n-GaN via laser-assisted Si doping. The contact resistivity of Ti (30 nm)/Al (200 nm) electrodes was reduced from 7.61 x 10(-4) to 8.72 x 10(-5) Omega . cm(2) by applying laser-assisted Si diffusion to the GaN surface before Ti/Al deposition. Moreover, no degradation in specific contact resistivity was observed for the highly doped samples after annealing at 300 degrees C. During this process, Si dopant atoms are believed to diffuse into GaN, whereas Ga-N bonds are broken by laser-assisted doping, which eventually increases the number of nitrogen vacancies and generates sites at which Si atoms are substituted for Ga on the GaN surface. This suggestion was verified by secondary ion mass spectrometry and X-ray photoelectron spectroscopy. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | SI | - |
dc.title | Improved Thermal Stability and Reduced Contact Resistance of Ohmic Contacts on N-Face n-Type GaN With Laser-Assisted Doping | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1109/LED.2012.2237498 | - |
dc.identifier.scopusid | 2-s2.0-84874662589 | - |
dc.identifier.wosid | 000315723000014 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.3, pp.372 - 374 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 34 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 372 | - |
dc.citation.endPage | 374 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordAuthor | Doping | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | laser | - |
dc.subject.keywordAuthor | N-face | - |
dc.subject.keywordAuthor | ohmic contacts | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
(02841) 서울특별시 성북구 안암로 14502-3290-1114
COPYRIGHT © 2021 Korea University. All Rights Reserved.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.