Effects of rapid thermal annealing on electrical, optical, and structural properties of Ni-doped In2O3 anodes for bulk heterojunction organic solar cells
- Authors
- Kim, Jun Ho; Seong, Tae-Yeon; Kim, Han-Ki
- Issue Date
- 3월-2013
- Publisher
- A V S AMER INST PHYSICS
- Citation
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.31, no.2
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Volume
- 31
- Number
- 2
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103868
- DOI
- 10.1116/1.4774212
- ISSN
- 0734-2101
- Abstract
- The authors investigated the effects of rapid thermal annealing (RTA) on the electrical, optical, and structural properties, and work functions of Ni-doped In2O3 (INO) anodes prepared by a DC/RF co-sputtering process for use in bulk heterojunction organic solar cells (OSCs). By RTA processing at 600 degrees C, the authors obtained the optimized INO anodes with a sheet resistance of 28 Omega/sq, an optical transmittance of 82.93%, and a work function of 5.02 eV, which are acceptable in OSC fabrication. In particular, the 600 degrees C annealed INO anode showed much higher optical transmittance in the near infrared wavelength region than the conventional ITO film, even though it had a low resistivity of 5.66 x 10(-4) Omega cm. The OSC fabricated on the annealed INO anode showed a higher power convention efficiency of 2.65% than the OSC with as-deposited INO anodes (2.19%) because the fill factors of the OSC are critically dependent on the sheet resistance of the anode. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4774212]
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