Electronic properties of light-emitting p-n hetero-junction array consisting of p(+)-Si and aligned n-ZnO nanowires
DC Field | Value | Language |
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dc.contributor.author | Bae, Min Young | - |
dc.contributor.author | Min, Kyung Whon | - |
dc.contributor.author | Yoon, Jangyeol | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.contributor.author | Ha, Jeong Sook | - |
dc.date.accessioned | 2021-09-06T04:16:08Z | - |
dc.date.available | 2021-09-06T04:16:08Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-02-28 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/103936 | - |
dc.description.abstract | Hetero-junction array of p(+)-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p(+)-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 10(4) at +/- 3V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 x 10(4) under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792302] | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | NANOGENERATORS | - |
dc.subject | DRIVEN | - |
dc.subject | GROWTH | - |
dc.title | Electronic properties of light-emitting p-n hetero-junction array consisting of p(+)-Si and aligned n-ZnO nanowires | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.contributor.affiliatedAuthor | Ha, Jeong Sook | - |
dc.identifier.doi | 10.1063/1.4792302 | - |
dc.identifier.scopusid | 2-s2.0-84874872903 | - |
dc.identifier.wosid | 000315667500072 | - |
dc.identifier.bibliographicCitation | JOURNAL OF APPLIED PHYSICS, v.113, no.8 | - |
dc.relation.isPartOf | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 113 | - |
dc.citation.number | 8 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | NANOGENERATORS | - |
dc.subject.keywordPlus | DRIVEN | - |
dc.subject.keywordPlus | GROWTH | - |
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