Electronic properties of light-emitting p-n hetero-junction array consisting of p(+)-Si and aligned n-ZnO nanowires
- Authors
- Bae, Min Young; Min, Kyung Whon; Yoon, Jangyeol; Kim, Gyu-Tae; Ha, Jeong Sook
- Issue Date
- 28-2월-2013
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.113, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 113
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/103936
- DOI
- 10.1063/1.4792302
- ISSN
- 0021-8979
- Abstract
- Hetero-junction array of p(+)-Si/n-ZnO nanowires (NWs) was fabricated via contacting of aligned ZnO NWs onto a patterned p(+)-Si substrate. Current-voltage (I-V) measurement on the p-n junction showed a rectification behavior with a high rectification ratio of 10(4) at +/- 3V. In addition, the enhancement of forward current as well as the decrease of the turn-on voltage was observed with the application of negative gate bias and noticeable p-type gate dependence, which was explained in terms of asymmetric shift of the Fermi levels with gate bias in the suggested energy band diagram. Such formed hetero-junction devices showed strong UV sensitivity of 2 x 10(4) under reverse bias of -3 V and electroluminescence in both UV and visible ranges, suggesting its potential applicability in optoelectronic devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792302]
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
- College of Engineering > Department of Chemical and Biological Engineering > 1. Journal Articles
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