Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Channel access resistance effects on charge carrier mobility and low-frequency noise in a polymethyl methacrylate passivated SnO2 nanowire field-effect transistors

Authors
Joo, Min-KyuHuh, JunghwanMouis, MireillePark, So JeongJeon, Dae-YoungJang, DoyoungLee, Jong-HeunKim, Gyu-TaeGhibaudo, Gerard
Issue Date
4-2월-2013
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.102, no.5
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
102
Number
5
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/103981
DOI
10.1063/1.4788708
ISSN
0003-6951
Abstract
Channel access resistance (R-sd) effects on the charge carrier mobility (mu) and low-frequency noise (LFN) in a polymethyl-methacrylate (PMMA) passivated tin-oxide nanowire (SnO2-NW) field effect-transistor were investigated. To this end, the Y function method was employed for direct electrical parameters extraction without R-sd influence. Numerical simulation was used to evaluate gate-to-channel capacitance (C-gc) accounting for the electrostatic gate coupling effects through PMMA passivation layer. Furthermore, LFN measurements were carried out to study the SnO2/dielectrics interface. The carrier number fluctuation (CNF) noise model was found appropriate to interpret LFN data provided R-sd influence is included. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4788708]
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
College of Engineering > School of Electrical Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Gyu Tae photo

Kim, Gyu Tae
공과대학 (전기전자공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE