Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors
DC Field | Value | Language |
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dc.contributor.author | Heo, K. | - |
dc.contributor.author | Hong, B. H. | - |
dc.contributor.author | Lee, E. H. | - |
dc.contributor.author | Lee, S. Y. | - |
dc.contributor.author | Kim, S. | - |
dc.contributor.author | Hwang, S. W. | - |
dc.date.accessioned | 2021-09-06T04:49:49Z | - |
dc.date.available | 2021-09-06T04:49:49Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2013-02 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/104102 | - |
dc.description.abstract | Temperature (T)-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients a of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T -dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | MOBILITY | - |
dc.subject | FIELD | - |
dc.title | Quantitative Extraction of Temperature-Dependent Barrier Height and Channel Resistance of a-SIZO/OMO and a-SIZO/IZO Thin-Film Transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, S. | - |
dc.identifier.doi | 10.1109/LED.2012.2226202 | - |
dc.identifier.scopusid | 2-s2.0-84873058744 | - |
dc.identifier.wosid | 000314173200033 | - |
dc.identifier.bibliographicCitation | IEEE ELECTRON DEVICE LETTERS, v.34, no.2, pp.247 - 249 | - |
dc.relation.isPartOf | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.title | IEEE ELECTRON DEVICE LETTERS | - |
dc.citation.volume | 34 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 247 | - |
dc.citation.endPage | 249 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FIELD | - |
dc.subject.keywordAuthor | Amorphous silicon-doped indium-zinc-oxide (a-SIZO) | - |
dc.subject.keywordAuthor | barrier height | - |
dc.subject.keywordAuthor | indium-zinc-oxide (IZO) | - |
dc.subject.keywordAuthor | oxide-metal-oxide (OMO) | - |
dc.subject.keywordAuthor | variable range hopping | - |
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