Synthesis and photochemical characterization of fumaronitrile-based organic semiconductor and its use in solution-processed small molecule organic solar cells
- Authors
- Lee, Jae Kwan; Jeong, Ban-Seok; Kim, Jooyoung; Kim, Chulwoo; Ko, Jaejung
- Issue Date
- 1-1월-2013
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Photoisomerisation; Organic semiconductor; Organic solar cell; Small molecule
- Citation
- JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY, v.251, pp.25 - 32
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
- Volume
- 251
- Start Page
- 25
- End Page
- 32
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/104236
- DOI
- 10.1016/j.jphotochem.2012.10.010
- ISSN
- 1010-6030
- Abstract
- A novel and efficient symmetrical donor-acceptor-donor organic semiconductor, TFN-bis[ter-HT3-TPA], comprising two triphenylamine (TPA) donors and one fumaronitrile (FN) acceptor linked by pi-conjugated hexylated quaterthiophene, was synthesized and its photovoltaic behavior in solution-processed small molecule organic solar cells (SMOSCs) was investigated. Under light illumination, the synthetic intermediate di-bithophenyl-fumaronitrile, containing the FN acceptor moiety, exhibited cis-trans isomerization in solution, while cis-trans photoisomerisation of TFN-bis[ter-HT3-TPA] was not observed, presumably because of the steric bulk of the TPA-hexylated terthiophene in the cis-isomer. The TFN-bis[ter-HT3-TPA] showed strong intramolecular charge transfer between the TPA donor and the FN acceptors. A TFN-bis[ter-HT3-TPA]:PC71 BM bulk heterojunction film with an optimized weight ratio of 1:3 resulted in an improved photovoltaic performance and an enhanced hole mobility. After insertion of a TiOx layer between the photoactive layer and the Al electrode, a power conversion efficiency of 2.21% was obtained in devices fabricated from the TFN-bis[ter-HT3-TPA]:PC71 BM film resulting in a similar to 17% higher efficiency than devices without a TiOx layer. (C) 2012 Elsevier B.V. All rights reserved.
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