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Ion conduction in nanoscale yttria-stabilized zirconia fabricated by atomic layer deposition with various doping rates

Authors
Son, Kyung SikBae, KihoKim, Jun WooHa, Jeong SukShim, Joon Hyung
Issue Date
1월-2013
Publisher
A V S AMER INST PHYSICS
Keywords
ald; sofc; ysz; doping
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.31, no.1
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume
31
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/104393
DOI
10.1116/1.4755921
ISSN
0734-2101
Abstract
The ion conduction of yttria-stabilized zirconia (YSZ) was studied by varying the doping ratios during atomic layer deposition (ALD). The ALD cycle ratio for the yttria and zirconia depositions was varied from 1:1 to 1:6, which corresponded to the doping ratios from 28.8% to 4.3%. The in-plane conductivity of ALD YSZ was enhanced by up to 2 orders of magnitude; the optimal ALD doping ratio (10.4%) was found to differ from that of bulk YSZ (8%). This different relationship between the doping ratio and the ion conduction for ALD YSZ versus bulk YSZ is due to the inhomogeneous doping in the vertical direction of the ALD YSZ films, as opposed to the homogenous doping of bulk YSZ. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4755921]
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공과대학 (화공생명공학과)
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