실리콘 용탕으로부터 직접 제조된 태양광용 다결정 실리콘의 SiC 오염 연구SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications
- Other Titles
- SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications
- Authors
- 이예능; 장보윤; 이진석; 김준수; 안영수; 윤우영
- Issue Date
- 2013
- Publisher
- 한국주조공학회
- Keywords
- Silicon; Wafer; Direct growth; Contamination; Silicon carbide
- Citation
- 한국주조공학회지, v.33, no.2, pp.69 - 74
- Indexed
- KCI
- Journal Title
- 한국주조공학회지
- Volume
- 33
- Number
- 2
- Start Page
- 69
- End Page
- 74
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/105060
- DOI
- 10.7777/jkfs.2013.33.2.069
- ISSN
- 1598-706X
- Abstract
- Silicon (Si) wafer was grown by using direct growth from Si melt and contaminations of wafer during the process were investigated. In our process, BN was coated inside of all graphite parts including crucible in system to prevent carbon contamination. In addition, coated BN layer enhance the wettability, which ensures the favorable shape of grown wafer by proper flow of Si melt in casting mold. As a result, polycrystalline silicon wafer with dimension of 156 × 156 mm and thickness of 300 ± 20 um was successively obtained. There were, however, severe contaminations such as BN and SiC on surface of the as-grown wafer. While BN powders were easily removed by brushing surface, SiC could not be eliminated. As a result of BN analysis, C source for SiC was from binder contained in BN slurry. Therefore, to eliminate those C sources, additional flushing process was carried out before Si was melted. By adding 3-times flushing processes, SiC was not detected on the surface of as-grown Si wafer. Polycrystalline Si wafer directly grown from Si melt in this study can be applied for the cost-effective Si solar cells.
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