Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures
- Authors
- Choi, Kyu Bum; Lee, Beom-Seok; Joung, Mi-Ri; Yoo, Jong Hee; Kim, Won; Nahm, Sahn
- Issue Date
- 2013
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ECS SOLID STATE LETTERS, v.2, no.7, pp.N21 - N25
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS SOLID STATE LETTERS
- Volume
- 2
- Number
- 7
- Start Page
- N21
- End Page
- N25
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/106564
- DOI
- 10.1149/2.003307ssl
- ISSN
- 2162-8742
- Abstract
- Amorphous Pr0.7Ca0.3MnO3(APCMO) films grown on a Pt electrode under an oxygen pressure(OP) of 5 mTorr showed a dense microstructure with a smooth surface but bipolar switching behavior was not observed in this film. Porosity and surface roughness increased with increasing OP and a typical bipolar switching behavior was observed in the APCMO films grown under 100 and 200 mTorr OP. The resistance of these APCMO films decreased with increasing device area in both low- and high-resistance states. Space-charge-limited current and Schottky emission were used to explain the leakage current mechanism of the Ti/APCMO/Pt device in low- and high-resistance states, respectively. (C) 2013 The Electrochemical Society. [DOI: 10.1149/2.003307ssl] All rights reserved.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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