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Large in-plane permittivity of Ba0.6Sr0.4TiO3 thin films crystallized using excimer laser annealing at 300 degrees C

Authors
Kang, Min-GyuCho, Kwang-HwanDo, Young HoLee, Young-JinNahm, SahnYoon, Seok-JinKang, Chong-Yun
Issue Date
10-12월-2012
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.101, no.24
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
101
Number
24
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106665
DOI
10.1063/1.4770307
ISSN
0003-6951
Abstract
We demonstrated a way to fabricate the crystalline Ba0.6Sr0.4TiO3 (BST) thin films using excimer laser annealing technique on the amorphous BST thin films fabricated by sol-gel process. The grain size of the laser-annealed films is larger than that of the conventionally thermal-annealed films. However, an uncrystallized, amorphous layer was observed near the film/substrate interface due to the limited laser absorption depth. The uncrystallized layer has a critical influence on out-of-plane dielectric property of BST films. The significant difference of the relative dielectric permittivity (epsilon(r)) between in-plane (1383) and out-of-plane (184) directions is observed. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4770307]
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College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
Graduate School > KU-KIST Graduate School of Converging Science and Technology > 1. Journal Articles

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