Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions
DC Field | Value | Language |
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dc.contributor.author | Huh, Junghwan | - |
dc.contributor.author | Joo, Min-Kyu | - |
dc.contributor.author | Jang, Doyoung | - |
dc.contributor.author | Lee, Jong-Heun | - |
dc.contributor.author | Kim, Gyu Tae | - |
dc.date.accessioned | 2021-09-06T12:02:39Z | - |
dc.date.available | 2021-09-06T12:02:39Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-12-07 | - |
dc.identifier.issn | 0959-9428 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106668 | - |
dc.description.abstract | The interactions between metal oxide nanowires and molecular species can significantly affect the electrical properties of metal oxide nanowires. A passivation process is needed to stabilize the electrical characteristics, regardless of the environmental changes. Herein, we investigated the passivation effects of a polymethyl methacrylate (PMMA) layer on SnO2 nanowire (NW) field-effect transistors (FETs). As a result of the PMMA coating, the electrical properties of the SnO2 NW FETs improved. The electrical noise behavior in both non-passivated and passivated devices can be described with the carrier number fluctuation model associated with the trapping and the release of charge carriers at the surface. The non-passivated devices exhibited higher noise levels than those of the passivated devices. These results demonstrate that surface passivation can lead to the suppression of dynamic responses (electron trapping/release events and scattering fluctuations). | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.subject | FIELD-EFFECT-TRANSISTOR | - |
dc.subject | NOISE | - |
dc.subject | TRANSPARENT | - |
dc.subject | FABRICATION | - |
dc.subject | DEVICES | - |
dc.title | Reduced charge fluctuations in individual SnO2 nanowires by suppressed surface reactions | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Heun | - |
dc.contributor.affiliatedAuthor | Kim, Gyu Tae | - |
dc.identifier.doi | 10.1039/c2jm35361j | - |
dc.identifier.scopusid | 2-s2.0-84868087375 | - |
dc.identifier.wosid | 000311522500039 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS CHEMISTRY, v.22, no.45, pp.24012 - 24016 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.title | JOURNAL OF MATERIALS CHEMISTRY | - |
dc.citation.volume | 22 | - |
dc.citation.number | 45 | - |
dc.citation.startPage | 24012 | - |
dc.citation.endPage | 24016 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | FIELD-EFFECT-TRANSISTOR | - |
dc.subject.keywordPlus | NOISE | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | DEVICES | - |
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