Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers
- Authors
- Kim, D. K.; Cho, J. U.; Chun, B. S.; Shin, K. H.; Lee, K. J.; Tsunoda, M.; Takahashi, M.; Kim, Y. K.
- Issue Date
- 3-Dec-2012
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.101, no.23
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 101
- Number
- 23
- ISSN
- 0003-6951
- Abstract
- We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 degrees C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121% from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768931]
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Kim, Young Keun
- College of Engineering (Department of Materials Science and Engineering)