Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Magnetotransport properties of dual MgO barrier magnetic tunnel junctions consisting of CoFeB/FeNiSiB/CoFeB free layers

Authors
Kim, D. K.Cho, J. U.Chun, B. S.Shin, K. H.Lee, K. J.Tsunoda, M.Takahashi, M.Kim, Y. K.
Issue Date
3-12월-2012
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.101, no.23
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
101
Number
23
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/106684
DOI
10.1063/1.4768931
ISSN
0003-6951
Abstract
We report the transport properties of a dual MgO barrier magnetic tunnel junction (DMTJ) where a FeNiSiB layer was inserted in a CoFeB free layer. Upon post-deposition annealing at 330 degrees C, the tunneling magnetoresistance (TMR) ratio of the DMTJ with a hybrid CoFeB/FeNiSiB/CoFeB free layer reached 195% which is higher than the TMR ratio of 121% from the DMTJ with the single CoFeB free layer. The bias voltage dependence profile was more symmetric for the hybrid case. Boron depth profiling result suggests that the FeNiSiB layer dragged boron atoms more to it rather than letting them diffuse toward CoFeB/MgO interfaces, resulting in improved MTJ performances. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768931]
Files in This Item
There are no files associated with this item.
Appears in
Collections
College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Kim, Young Keun photo

Kim, Young Keun
공과대학 (신소재공학부)
Read more

Altmetrics

Total Views & Downloads

BROWSE