Unipolar resistive switching phenomena in fully transparent SiN-based memory cells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Hee-Dong | - |
dc.contributor.author | An, Ho-Myoung | - |
dc.contributor.author | Hong, Seok Man | - |
dc.contributor.author | Kim, Tae Geun | - |
dc.date.accessioned | 2021-09-06T12:42:06Z | - |
dc.date.available | 2021-09-06T12:42:06Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-12 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106847 | - |
dc.description.abstract | We report the first fabrication of a transparent resistive switching memory (T-RSM) device using ITO/SiN/ITO capacitors that show a stable endurance of > 100 cycles and a retention time of > 10(5) s at 85 degrees C under unipolar switching operation. This device shows optical transmittance approximately 70% in the visible region. Both temperature-dependent studies and power-law relations at ON/OFF states reveal that metallic conduction is mainly responsible for the ON state, whereas the insulating property and a weak filament are observed for the OFF state at once. We believe that this SiN-based T-RSM could be a milestone for future see-through electronic devices. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Unipolar resistive switching phenomena in fully transparent SiN-based memory cells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Geun | - |
dc.identifier.doi | 10.1088/0268-1242/27/12/125020 | - |
dc.identifier.scopusid | 2-s2.0-84870256732 | - |
dc.identifier.wosid | 000311844400029 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.27, no.12 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 27 | - |
dc.citation.number | 12 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
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