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Microstructure and microwave dielectric properties of Bi12SiO20 ceramics
- Authors
- Jeong, Byoung-Jik; Joung, Mi-Ri; Kweon, Sang-Hyo; Kim, Jin-Seong; Nahm, Sahn; Choi, Ji-Won; Hwang, Seong-Ju
- Issue Date
- 12월-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Ceramics; Oxides; Dielectric properties; Microstructure
- Citation
- MATERIALS RESEARCH BULLETIN, v.47, no.12, pp.4510 - 4513
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS RESEARCH BULLETIN
- Volume
- 47
- Number
- 12
- Start Page
- 4510
- End Page
- 4513
- ISSN
- 0025-5408
- Abstract
- Bi12SiO20 ceramics were well sintered at 800 degrees C after calcination at 700 degrees C. A liquid phase of composition Bi2O3 was formed during the sintering at temperatures >= 800 degrees C and assisted the densification of the Bi12SiO20 ceramics. When the sintering temperature exceeded 800 degrees C, however, the relative density, epsilon(r), and Q x f values of the Bi12SiO20 ceramics decreased, probably due to the formation of a large amount of the liquid phase. The Bi12SiO20 ceramics sintered at 800 degrees C for 5.0 h exhibited excellent microwave dielectric properties with a high epsilon(r) of 43, a high Q x f of 86,802 GHz and a small tau(f) of -10.39 ppm/degrees C. (C) 2012 Elsevier Ltd. All rights reserved.
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