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High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared

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dc.contributor.authorChoi, Woong-
dc.contributor.authorCho, Mi Yeon-
dc.contributor.authorKonar, Aniruddha-
dc.contributor.authorLee, Jong Hak-
dc.contributor.authorCha, Gi-Beom-
dc.contributor.authorHong, Soon Cheol-
dc.contributor.authorKim, Sangsig-
dc.contributor.authorKim, Jeongyong-
dc.contributor.authorJena, Debdeep-
dc.contributor.authorJoo, Jinsoo-
dc.contributor.authorKim, Sunkook-
dc.date.accessioned2021-09-06T13:10:10Z-
dc.date.available2021-09-06T13:10:10Z-
dc.date.created2021-06-14-
dc.date.issued2012-11-14-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/106942-
dc.description.abstractPhototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherWILEY-V C H VERLAG GMBH-
dc.subjectPHOTOCONDUCTIVITY-
dc.subjectTRANSISTORS-
dc.titleHigh-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Sangsig-
dc.contributor.affiliatedAuthorJoo, Jinsoo-
dc.identifier.doi10.1002/adma.201201909-
dc.identifier.scopusid2-s2.0-84868713254-
dc.identifier.wosid000310876700003-
dc.identifier.bibliographicCitationADVANCED MATERIALS, v.24, no.43, pp.5832 - 5836-
dc.relation.isPartOfADVANCED MATERIALS-
dc.citation.titleADVANCED MATERIALS-
dc.citation.volume24-
dc.citation.number43-
dc.citation.startPage5832-
dc.citation.endPage5836-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryChemistry, Physical-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusPHOTOCONDUCTIVITY-
dc.subject.keywordPlusTRANSISTORS-
dc.subject.keywordAuthorMoS2-
dc.subject.keywordAuthorphototransistors-
dc.subject.keywordAuthortransition metal dichalcogenide-
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공과대학 (전기전자공학부)
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