High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared
DC Field | Value | Language |
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dc.contributor.author | Choi, Woong | - |
dc.contributor.author | Cho, Mi Yeon | - |
dc.contributor.author | Konar, Aniruddha | - |
dc.contributor.author | Lee, Jong Hak | - |
dc.contributor.author | Cha, Gi-Beom | - |
dc.contributor.author | Hong, Soon Cheol | - |
dc.contributor.author | Kim, Sangsig | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.contributor.author | Jena, Debdeep | - |
dc.contributor.author | Joo, Jinsoo | - |
dc.contributor.author | Kim, Sunkook | - |
dc.date.accessioned | 2021-09-06T13:10:10Z | - |
dc.date.available | 2021-09-06T13:10:10Z | - |
dc.date.created | 2021-06-14 | - |
dc.date.issued | 2012-11-14 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/106942 | - |
dc.description.abstract | Phototransistors based on multilayer MoS2 crystals are demonstrated with a wider spectral response and higher photoresponsivity than single-layer MoS2 phototransistors. Multilayer MoS2 phototransistors further exhibit high room temperature mobilities (>70 cm(2)V(-1)s(-1)), near-ideal subthreshold swings (similar to 70 mV decade-1), low operating gate biases (<5 V), and negligible shifts in the threshold voltages during illumination. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.subject | PHOTOCONDUCTIVITY | - |
dc.subject | TRANSISTORS | - |
dc.title | High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.contributor.affiliatedAuthor | Joo, Jinsoo | - |
dc.identifier.doi | 10.1002/adma.201201909 | - |
dc.identifier.scopusid | 2-s2.0-84868713254 | - |
dc.identifier.wosid | 000310876700003 | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.24, no.43, pp.5832 - 5836 | - |
dc.relation.isPartOf | ADVANCED MATERIALS | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 24 | - |
dc.citation.number | 43 | - |
dc.citation.startPage | 5832 | - |
dc.citation.endPage | 5836 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | PHOTOCONDUCTIVITY | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | phototransistors | - |
dc.subject.keywordAuthor | transition metal dichalcogenide | - |
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