Flexible Nano-Floating-Gate Memory With Channels of Enhancement-Mode Si Nanowires

Abstract

The electrical characteristics of a flexible nano-floating-gate memory (NFGM) device with a channel made of an enhancement-mode n(+)-p-n(+) Si nanowire (Si-NW) are investigated in this work. The NFGM based on the enhancement-mode Si-NW field-effect transistor is constructed on a plastic substrate with a Pt-nanocrystal floating-gate layer; it exhibits an ON-current/OFF-current ratio of similar to 10(7) and a subthreshold swing of 88 mV/dec. The NFGM shows good memory characteristics and mechanical flexibility, such as a threshold voltage shift of 1.85 V, a retention time of up to similar to 10(4) s, and a stability for up to 1000 bending cycles. The present study demonstrates the promising potential of flexible Si-NW-based nonvolatile memories for future electronics.