Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors
DC Field | Value | Language |
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dc.contributor.author | Laha, P. | - |
dc.contributor.author | Banerjee, I. | - |
dc.contributor.author | Bajaj, A. | - |
dc.contributor.author | Chakraborty, P. | - |
dc.contributor.author | Barhai, P. K. | - |
dc.contributor.author | Dahiwale, S. S. | - |
dc.contributor.author | Das, A. K. | - |
dc.contributor.author | Bhoraskar, V. N. | - |
dc.contributor.author | Kim, D. | - |
dc.contributor.author | Mahapatra, S. K. | - |
dc.date.accessioned | 2021-09-06T14:44:40Z | - |
dc.date.available | 2021-09-06T14:44:40Z | - |
dc.date.created | 2021-06-15 | - |
dc.date.issued | 2012-10 | - |
dc.identifier.issn | 0969-806X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/107246 | - |
dc.description.abstract | The influence of 6 MeV electron irradiation on the electrical properties of Al/Al2O3/n-Si metal-oxide-semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al2O3/n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate similar to 1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V-FB) and interface trap density (D-it) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/omega vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan delta vs V graph. The device parameters were estimated using C-V and G/omega-V measurements. Poole-Frenkel coefficient (beta(PF)) of the MOS capacitors was determined from leakage current (I)-voltage (V) measurement. The leakage current mechanism was proposed from the beta(PF) value. (c) 2012 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | METAL-OXIDE-SEMICONDUCTOR | - |
dc.subject | DIELECTRIC-PROPERTIES | - |
dc.subject | RAY IRRADIATION | - |
dc.subject | AU/SNO2/N-SI | - |
dc.subject | CONSTANT | - |
dc.subject | VOLTAGE | - |
dc.subject | SINGLE | - |
dc.subject | CHARGE | - |
dc.title | Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, D. | - |
dc.identifier.doi | 10.1016/j.radphyschem.2012.04.006 | - |
dc.identifier.scopusid | 2-s2.0-84863856005 | - |
dc.identifier.wosid | 000307130100012 | - |
dc.identifier.bibliographicCitation | RADIATION PHYSICS AND CHEMISTRY, v.81, no.10, pp.1600 - 1605 | - |
dc.relation.isPartOf | RADIATION PHYSICS AND CHEMISTRY | - |
dc.citation.title | RADIATION PHYSICS AND CHEMISTRY | - |
dc.citation.volume | 81 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1600 | - |
dc.citation.endPage | 1605 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Physics, Atomic, Molecular & Chemical | - |
dc.subject.keywordPlus | METAL-OXIDE-SEMICONDUCTOR | - |
dc.subject.keywordPlus | DIELECTRIC-PROPERTIES | - |
dc.subject.keywordPlus | RAY IRRADIATION | - |
dc.subject.keywordPlus | AU/SNO2/N-SI | - |
dc.subject.keywordPlus | CONSTANT | - |
dc.subject.keywordPlus | VOLTAGE | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | CHARGE | - |
dc.subject.keywordAuthor | MOS device | - |
dc.subject.keywordAuthor | Electron irradiation | - |
dc.subject.keywordAuthor | Interface trap density | - |
dc.subject.keywordAuthor | Flat band voltage | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.subject.keywordAuthor | Al2O3 | - |
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