Irradiation effects of 6 MeV electron on electrical properties of Al/Al2O3/n-Si MOS capacitors
- Authors
- Laha, P.; Banerjee, I.; Bajaj, A.; Chakraborty, P.; Barhai, P. K.; Dahiwale, S. S.; Das, A. K.; Bhoraskar, V. N.; Kim, D.; Mahapatra, S. K.
- Issue Date
- 10월-2012
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- MOS device; Electron irradiation; Interface trap density; Flat band voltage; Leakage current; Al2O3
- Citation
- RADIATION PHYSICS AND CHEMISTRY, v.81, no.10, pp.1600 - 1605
- Indexed
- SCIE
SCOPUS
- Journal Title
- RADIATION PHYSICS AND CHEMISTRY
- Volume
- 81
- Number
- 10
- Start Page
- 1600
- End Page
- 1605
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/107246
- DOI
- 10.1016/j.radphyschem.2012.04.006
- ISSN
- 0969-806X
- Abstract
- The influence of 6 MeV electron irradiation on the electrical properties of Al/Al2O3/n-Si metal-oxide-semiconductor (MOS) capacitors has been investigated. Using rf magnetron sputtering deposition technique, Al/Al2O3/n-Si MOS capacitors were fabricated and such twelve capacitors were divided into four groups. The first group of MOS capacitors was not irradiated with 6 MeV electrons and treated as virgin. The second group, third group and fourth group of MOS capacitors were irradiated with 6 MeV electrons at 10 kGy, 20 kGy, and 30 kGy doses, respectively, keeping the dose rate similar to 1 kGy/min. The variations in crystallinity of the virgin and irradiated MOS capacitors have been compared from GIXRD (Grazing Incidence X-ray Diffraction) spectra. Thickness and in-depth elemental distributions of individual layers were performed using Secondary Ion Mass Spectrometry (SIMS). The device parameters like flat band voltage (V-FB) and interface trap density (D-it) of virgin and irradiated MOS capacitors have been calculated from C vs V and G/omega vs V curve, respectively. The electrical properties of the capacitors were investigated from the tan delta vs V graph. The device parameters were estimated using C-V and G/omega-V measurements. Poole-Frenkel coefficient (beta(PF)) of the MOS capacitors was determined from leakage current (I)-voltage (V) measurement. The leakage current mechanism was proposed from the beta(PF) value. (c) 2012 Elsevier Ltd. All rights reserved.
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